Litcius/Paper detail

Effect of oxygen defect on the performance of Nd: InZnO high mobility thin-film transistors

Yilin Li, Xuan Zeng, Qiannan Ye, Rihui Yao, Jinyao Zhong, Xiao Fu, Yuexin Yang, Muyun Li, Honglong Ning, Junbiao Peng

2022Surfaces and Interfaces21 citationsDOI

Topics & Concepts

Thin-film transistorHomojunctionMaterials scienceX-ray photoelectron spectroscopyOptoelectronicsSemiconductorOxygenTransistorOxideSputteringThreshold voltageThin filmNanotechnologyChemical engineeringVoltageElectrical engineeringHeterojunctionChemistryMetallurgyOrganic chemistryLayer (electronics)EngineeringThin-Film Transistor TechnologiesZnO doping and propertiesCCD and CMOS Imaging Sensors
Effect of oxygen defect on the performance of Nd: InZnO high mobility thin-film transistors | Litcius