A New Fabrication Method for Capacitive Displacement Sensor
Wenmei ZHANG, Zhenxiang Bu, Jiayin Li, Yuchen Wu, Lingyun Wang
Abstract
Capacitive displacement sensor is becoming increasingly important in the industry due to its non-contact measurement, excellent dynamic performance, and high accuracy. However, traditional fabrication methods for high-precision capacitive displacement sensor suffer from low efficiency and high assembly difficulties. In this paper, a novel method to fabricate capacitive displacement sensor using a glass-in-silicon reflow process is proposed. This process combines semiconductor technology to realize an integrated fabrication of the conducting and insulating parts of the sensor probe. On the basis of the reduction of parasitic capacitance and the suppression of edge effect, this method can significantly reduce the fabrication difficulties and costs. In addition, it provides a new option for the fabrication of this type of composite structure, where the insulating parts are embedded coplanar with its conducting parts. The full text includes the simulation and design of the sensor, the research on the glass-in-silicon reflow process, the fabrication of the probe, and the assembly and measurement of the sensor. The experimental results fully verify the feasibility of the capacitive displacement sensor fabricated by the glass-in-silicon reflow process. The capacitive measurement curve shows the sensitivity of the sensor to the displacement, which indicates that the design of this sensor has potential for practical applications.