The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures
H. G. Çetinkaya, S. Bengi, Ömer Sevgi̇li̇, Ş. Altındal
Abstract
Abstract To determine the Al/(CMAT)/p-Si structure’s admittance analysis, capacitance/conductance versus frequency (C/G-V-f) data was obtained in the 3 kHz-3 MHz and −2/4 V ranges at room temperature. The powder form of CeMgAl 11 O 19 : Tb (CMAT) was thermally evaporated onto the front of p-Si wafer at 10 −6 Torr as interfacial layer. From the Nicollian and Brews method, voltage-dependent spectra of R s were derived for various frequencies. The parallel conductance and low-high frequency capacitance (C LF -C HF ) techniques, respectively, were used to determine the voltage and frequency dependent spectra of N ss and their lifetime ( τ ). Surface states (N ss ), which are identified by admittance measurements, emerge at the M/S interlayer because of high capacitance and conductance values at low frequencies. This can also be explained by the N ss ’s ability to track ac signals well at lower frequencies. The normalized parallel conductance versus frequency (Gp/ ω -f) plot under various biases shows a peak because of N ss existence. x-ray diffractometer (XRD) was used for structural investigation and the average crystal size (D) of the nanocrystals (CMAT) was found to be less than 0.34 nm by using the Debye-Scherer’s equation.