Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition
Ray‐Hua Horng, Apoorva Sood, Siddharth Rana, Niall Tumilty, Fu‐Gow Tarntair, Catherine Langpoklakpam, Hao‐Chung Kuo, J. P. Singh
Abstract
Conductive β-Ga2O3 epilayers grown on the sapphire substrate using metalorganic chemical vapor deposition (MOCVD) were studied by Si-ion implanted. A metal-insulator-semiconductor diode (MISD) was fabricated using undoped and Si implanted β-Ga2O3 epitaxial layer. The electrical and carrier transport properties of the different MISD with different distance between cathode and anode contact ranging from 10 to 200 μm is studied. The various parameters such as forward current density, reverse breakdown voltage and ideality factor of the diodes has been calculated from the current-voltage curve. A reverse breakdown voltage of about 1.1 kV was observed in case of anode-cathode distance of 200 μm.