Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure
Anyuan Gao, Yufei Liu, Jian-Xiang Qiu, Barun Ghosh, Thaís V. Trevisan, Yugo Onishi, Chaowei Hu, Tiema Qian, Hung‐Ju Tien, Shaowen Chen, Mengqi Huang, Damien Bérubé, Houchen Li, Christian Tzschaschel, Thao Dinh, Zhe Sun, Sheng-Chin Ho, Shang‐Wei Lien, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, David C. Bell, Hsin Lin, Tay‐Rong Chang, Chunhui Du, Arun Bansil, Liang Fu, Ni Ni, Peter P. Orth, Qiong Ma, Su‐Yang Xu
Abstract
Quantum geometry in condensed-matter physics has two components: the real part quantum metric and the imaginary part Berry curvature. Whereas the effects of Berry curvature have been observed through phenomena such as the quantum Hall effect in two-dimensional electron gases and the anomalous Hall effect (AHE) in ferromagnets, the quantum metric has rarely been explored. Here, we report a nonlinear Hall effect induced by the quantum metric dipole by interfacing even-layered MnBi 2 Te 4 with black phosphorus. The quantum metric nonlinear Hall effect switches direction upon reversing the antiferromagnetic (AFM) spins and exhibits distinct scaling that is independent of the scattering time. Our results open the door to discovering quantum metric responses predicted theoretically and pave the way for applications that bridge nonlinear electronics with AFM spintronics.