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Semiconductor to metallic transition under induced pressure in Cs<sub>2</sub>AgBiBr<sub>6</sub> double halide perovskite: a theoretical DFT study for photovoltaic and optoelectronic applications

Md. Nurul Islam, Jiban Podder, Tusar Saha, Protima Rani

2021RSC Advances76 citationsDOIOpen Access PDF

Abstract

octahedra, which reduces the density of states of the Fermi surface and lowers the total energy. The mechanical behaviors demonstrated that the studied materials are mechanically stable as well as ductile and their ductile nature is enhanced by the driving pressure. The absorption peak is shifted towards the low energy region with increased hydrostatic pressure. The absorptivity and dielectric constant values are also increased with driving pressure. Phase transformed double halide perovskites triggered by outside stimuli produce several outstanding materials properties, giving great scope for a broad range of applications. This type of pristine and disordered double halide perovskite with pressure-driven semiconductor-to-metal phase transition samples may have potential applications in optoelectronic and photovoltaic devices.

Topics & Concepts

Band gapHydrostatic pressurePerovskite (structure)Density functional theoryMaterials scienceSemiconductorHalideDirect and indirect band gapsFermi levelPhase (matter)OptoelectronicsCondensed matter physicsChemistryComputational chemistryCrystallographyInorganic chemistryThermodynamicsOrganic chemistryQuantum mechanicsElectronPhysicsPerovskite Materials and ApplicationsSolid-state spectroscopy and crystallographyThermal Expansion and Ionic Conductivity
Semiconductor to metallic transition under induced pressure in Cs<sub>2</sub>AgBiBr<sub>6</sub> double halide perovskite: a theoretical DFT study for photovoltaic and optoelectronic applications | Litcius