Growth of freestanding GaN crystals on three-dimensional mesh porous substrates by HVPE
Zhongxin Wang, Shouzhi Wang, Lei Liu, Jiaoxian Yu, Guodong Wang, Qiubo Li, Zhanguo Qi, Xiangang Xu, Lei Zhang
Abstract
The effect of two-step etching on a substrate surface structure was investigated, and the nucleation mechanism and dislocation evolution of HVPE-grown GaN on porous structures were studied in depth.
Topics & Concepts
Materials scienceSubstrate (aquarium)PorosityOptoelectronicsNanotechnologyCrystallographyChemical engineeringComposite materialChemistryBiologyEcologyEngineeringGaN-based semiconductor devices and materialsZnO doping and propertiesGa2O3 and related materials