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Design and Simulation-Based Analysis of Triple Metal Gate with Ferroelectric-SiGe Heterojunction Based Vertical TFET for Performance Enhancement

Shailendra Singh, Rupali Gupta, Priyanka, Raghvendra Singh, Sanjeev Kumar Bhalla

2022Silicon15 citationsDOI

Topics & Concepts

Materials scienceHeterojunctionFerroelectricityWork functionOptoelectronicsTransconductanceCapacitanceDielectricNegative impedance converterBand diagramGate dielectricOxideTransistorNanotechnologyLayer (electronics)Electrical engineeringElectrodeVoltageVoltage sourcePhysical chemistryMetallurgyEngineeringChemistryAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesFerroelectric and Negative Capacitance Devices
Design and Simulation-Based Analysis of Triple Metal Gate with Ferroelectric-SiGe Heterojunction Based Vertical TFET for Performance Enhancement | Litcius