Detailed loss analysis of 24.8% large-area screen-printed n-type solar cell with polysilicon passivating contact
Peiting Zheng, Jie Yang, Zhao Wang, Lu Wu, Haijie Sun, Shi Chen, Yao Guo, Xia Han, Sieu Pheng Phang, Er‐Chien Wang, Josua Stückelberger, Hang Cheong Sio, Xinyu Zhang, Daniel Macdonald, Hao Jin
Abstract
Doped polysilicon-based passivating contacts are expected to be a key technology to enable higher efficiency in mass-produced silicon solar cells in coming years, with the world market share expected to increase almost 9-fold to 35% in 2031. The excellent carrier selectivity of passivated contacts enables low-resistance extraction of carriers without compromising surface passivation and has been instrumental in recent advances in high-efficiency solar cells. Here, we report on the application of phosphorus-doped polysilicon passivating contacts on large-area screen-printed n-type silicon solar cells, using industrially viable fabrication processes. A champion cell efficiency of 24.79% is reported, as independently measured by ISFH-CalTeC on a 163.75 × 163.75-mm solar cell. Detailed characterization and simulation are applied to investigate the primary losses and pathways for further improvement of the state-of-the-art industrial high-efficiency solar cell, revealing that the front-side boron-diffused region accounts for around 63% of the electrical losses.