High-Speed and High-Responsivity Quasi- Vertical Schottky Photodetectors of Epitaxial Ga 2O 3on Pt Substrate
Huanyu Zhang, Chunhong Zeng, Tiwei Chen, Li Zhang, Gaofu Guo, Zibo Li, Yu Hu, Zhili Zou, Xiaodong Zhang, Wenhua Shi, Zhongming Zeng, Baoshun Zhang
Abstract
A quasi-vertical Schottky diodes with high speed and high responsivity were demonstrated by epitaxially growing Ga 2O 3on Pt. The research further investigated the impact of incorporating metal stripes in the photosensitive region to enhance both the responsivity and response speed of the device. Characterization of the photoresponses reveals that these devices exhibit high sensitivity to solar-blind ultraviolet light, peaking at approximately 260 nm. At the bias of −5V, the detector achieves a responsivity of 2998 A/W, an exceptional specific detectivity of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.68\times 10^{{7}}$ </tex-math></inline-formula> Jones and a high response speed about 0.1 ms. By applying these metrics demonstrate substantial improvements over existing technologies and suggest a promising avenue for developing high speed and high responsivity photodetectors.