Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors
Jian Liang, Yuliar Firdaus, Chun Hong Kang, Jung‐Wook Min, Jung‐Hong Min, Redha H. Al Ibrahim, Nimer Wehbe, Mohamed Nejib Hedhili, Dimitrios Kaltsas, Leonidas Tsetseris, Sergei Lopatin, Shuiqin Zheng, Tien Khee Ng, Thomas D. Anthopoulos, Boon S. Ooi
Abstract
% under illumination with ultraviolet light (peak wavelength of 330 nm). The work opens a new pathway for making a plethora of hybrid optoelectronic devices of inorganic and organic nature by using p-type CuSCN as the hole injection layer.
Topics & Concepts
PhotodetectorMaterials scienceUltravioletHeterojunctionOptoelectronicsBand gapChlorineMetallurgyGa2O3 and related materialsGaN-based semiconductor devices and materialsZnO doping and properties