Synthesis of Ultrathin Topological Insulator β‐Ag<sub>2</sub>Te and Ag<sub>2</sub>Te/WSe<sub>2</sub>‐Based High‐Performance Photodetector
Fapeng Sun, Wenting Hong, Xu He, Chuanyong Jian, Qiankun Ju, Qian Cai, Wei Liu
Abstract
Abstract β‐Ag 2 Te has attracted considerable attention in the application of electronics and optoelectronics due to its narrow bandgap, high mobility, and topological insulator properties. However, it remains a significant challenge to synthesize 2D Ag 2 Te because of the non‐layered structure of Ag 2 Te. Herein, the synthesis of large‐size, ultrathin single crystal topological insulator 2D Ag 2 Te via the van der Waals epitaxial method for the first time is reported. The 2D Ag 2 Te crystal exhibits p‐type conduction behavior with high carrier mobility of 3336 cm 2 V −1 s −1 at room temperature. Taking advantage of the high mobility and perfect electron structure of Ag 2 Te, the Ag 2 Te/WSe 2 heterojunctions are fabricated via mechanical stacking and show an ultrahigh rectification ratio of 2 × 10 5 . Ag 2 Te/WSe 2 photodetector also exhibits self‐driven properties with a fast response speed (40 µs/60 µs) in the near‐infrared region. High responsivity (219 mA W −1 ) and light ON/OFF ratio of 6 × 10 5 are obtained under the photovoltaic mode. The overall performance of the Ag 2 Te/WSe 2 photodetector is significantly competitive among all reported 2D photodetectors. These results indicate that 2D Ag 2 Te is a promising candidate for future electronic and optoelectronic applications.