Atomic layer deposition of rhodium and palladium thin film using low-concentration ozone
Yiming Zou, Chunyu Cheng, Yuanyuan Guo, Amanda Jiamin Ong, Ronn Goei, Shuzhou Li, Alfred Iing Yoong Tok
Abstract
was applied to prevent the oxidation of the noble metallic film, and to ensure fast growth rates of 0.42 Å per cycle for Rh, and 0.22 Å per cycle for Pd. When low-concentration ozone was applied to react with ligand, no excess ozone was available to oxidize the metal products. The surfaces of deposited films obtained the RMS roughness values of 0.30 nm for Rh and 0.13 nm for Pd films. The resistivities of 18 nm Rh and 22 nm Pd thin films were 17 μΩ cm and 63 μΩ cm.
Topics & Concepts
RhodiumPalladiumAtomic layer depositionLayer (electronics)Deposition (geology)OzoneMaterials scienceOzone layerChemical engineeringEnvironmental chemistryChemistryNanotechnologyCatalysisGeologyOrganic chemistryEngineeringSedimentPaleontologySemiconductor materials and devicesCatalytic Processes in Materials ScienceElectronic and Structural Properties of Oxides