Resistive switching studies in VO2 thin films
Abhimanyu Rana, Chuan Li, Gertjan Koster, H. Hilgenkamp
Abstract
Abstract The hysteretic insulator-to-metal transition of VO 2 is studied in detail for pulsed laser deposition grown thin films on TiO 2 substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.
Topics & Concepts
Joule heatingPulsed laser depositionResistive touchscreenThin filmMaterials scienceOptoelectronicsAtmospheric temperature rangeHysteresisPhase transitionJoule (programming language)Electrical resistivity and conductivityMetal–insulator transitionNanotechnologyCondensed matter physicsElectrical engineeringMetalComposite materialThermodynamicsPhysicsMetallurgyEngineeringEfficient energy useAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsCCD and CMOS Imaging Sensors