Interplay Between Switching and Retention in HfO<sub>2</sub>-Based Ferroelectric FETs
Halid Mulaosmanovic, Franz Müller, Maximilian Lederer, Tarek Ali, Raik Hoffmann, Konrad Seidel, Haidi Zhou, J. Ocker, Stefan Mueller, Stefan Dünkel, Dominik Kleimaier, Johannes Müller, Martin Trentzsch, Sven Beyer, Evelyn T. Breyer, Thomas Mikolajick, Stefan Slesazeck
Abstract
Long data retention is a critical requirement for many of the potential applications of HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based ferroelectric field-effect transistors (FeFETs). However, methods for its rapid assessment are still missing. In this article, we report a detailed investigation of the retention and switching properties of FeFETs fabricated in the 28-nm high-k metal gate technology. We identify a clear correlation between the two properties and propose a method for fast prediction of the device retention behavior, which can be easily adopted to judge different fabrication processes. Finally, we extend the validity of the method to a direct assessment of disturb-free operating conditions, which may be particularly valuable for FeFET array operation.