Two-stage filamentary mechanism in high-performance organic resistive switches
Arti Bisht, Nitish Saini, Komal Bhardwaj, Rachana Kumar, Ajeet Kumar
Abstract
The PDI RS device performs excellently in basic characteristics such as low operating voltages, great endurance, and a two-year shelf life. The quantized conductance steps of the device demonstrate its potential for multilevel memory applications.
Topics & Concepts
Materials scienceConductanceResistive random-access memoryStage (stratigraphy)Mechanism (biology)Resistive touchscreenOptoelectronicsVoltageNanotechnologyElectrical engineeringCondensed matter physicsEngineeringPhysicsPaleontologyQuantum mechanicsBiologyAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices