Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants
Rajeewa Kumar Jaisawal, Sunil Rathore, P. N. Kondekar, Navjeet Bagga
Topics & Concepts
DopantMaterials scienceDopingCapacitanceOptoelectronicsReliability (semiconductor)FerroelectricityPolarization (electrochemistry)Layer (electronics)Thin filmElectronic engineeringCondensed matter physicsNanotechnologyChemistryDielectricPhysicsEngineeringThermodynamicsElectrodePower (physics)Physical chemistryFerroelectric and Negative Capacitance DevicesMXene and MAX Phase MaterialsSemiconductor materials and devices