Failure mechanisms of AlGaN/GaN HEMTs irradiated by high-energy heavy ions with and without bias
Peipei Hu, Lijun Xu, Shengxia Zhang, Pengfei Zhai, Ling Lv, Xiaoyu Yan, Zongzhen Li, Yanrong Cao, Xuefeng Zheng, Jian Zeng, Yuan He, Jie Liu
Topics & Concepts
Materials scienceOptoelectronicsHigh-electron-mobility transistorGallium nitrideHeterojunctionIrradiationTransistorLeakage (economics)VoltageLayer (electronics)NanotechnologyElectrical engineeringPhysicsMacroeconomicsNuclear physicsEconomicsEngineeringSemiconductor materials and devicesIon-surface interactions and analysisGaN-based semiconductor devices and materials