Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor

Yafeng Deng, Yixiang Li, Pengfei Wang, Shuang Wang, Xuan Pan, Dong Wang

2022Journal of Semiconductors15 citationsDOI

Abstract

Abstract With the atomically sharp interface and stable switching channel, van der Waals (vdW) heterostructure memristors have attracted extensive interests for the application of high-density memory and neuromorphic computing. Here, we demonstrate a new type of vdW heterostructure memristor device by sandwiching a single-crystalline h-BN layer between two thin graphites. In such a device, a stable bipolar resistive switching (RS) behavior has been observed for the first time. We also characterize their switching performance, and observe an on/off ratio of >10 3 and a minimum RESET voltage variation coefficient of 3.81%. Our work underscores the potential of 2D materials and vdW heterostructures for emerging memory and neuromorphic applications.

Topics & Concepts

Neuromorphic engineeringHeterojunctionMaterials scienceMemristorGraphiteOptoelectronicsResistive random-access memoryHexagonal boron nitridevan der Waals forceNanotechnologyBoron nitrideCondensed matter physicsVoltageElectronic engineeringElectrical engineeringComposite materialComputer sciencePhysicsEngineeringGrapheneArtificial neural networkQuantum mechanicsMoleculeMachine learningAdvanced Memory and Neural Computing2D Materials and ApplicationsFerroelectric and Negative Capacitance Devices