Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse
Yurong Jiang, Linlin Zhang, Rui Wang, Hongzhi Li, Lin Li, Suicai Zhang, Xueping Li, Jian Su, Xiaohui Song, Congxin Xia
Abstract
Ferroelectric field-effect transistors (Fe-FET) are promising candidates for future information devices. However, they suffer from low endurance and short retention time, which retards the application of processing memory in the same physical processes. Here, inspired by the ferroelectric proximity effects, we design a reconfigurable two-dimensional (2D) MoS2 transistor featuring with asymmetric ferroelectric gate, exhibiting high memory and logic ability with a program/erase ratio of over 106 and a self-rectifying ratio of 103. Interestingly, the robust electric and optic cycling are obtained with a large switching ratio of 106 and nine distinct resistance states upon optical excitation with excellent nonvolatile characteristics. Meanwhile, the operation of memory mimics the synapse behavior in response to light spikes with different intensity and number. This design realizes an integration of robust processing memory in one single device, which demonstrates a considerable potential of an asymmetric ferroelectric gate in the development of Fe-FETs for logic processing and nonvolatile memory applications.