Laser Patterning for 2D Lateral and Vertical VS<sub>2</sub>/MoS<sub>2</sub> Metal/Semiconducting Heterostructures
Jingyi Liang, Wen Huang, Zimei Zhang, Xin Li, Pin Lu, Wei Li, Miaomiao Liu, Ying Huangfu, Rong Song, Ruixia Wu, Bo Li, Zhang Lin, Liyuan Chai, Xidong Duan, Jia Li
Abstract
Abstract 2D metal/semiconducting heterostructures have attracted extensive attention for potential applications in future electronic and optoelectronic devices. However, the simple and fast preparation of patterned metal/semiconducting heterostructures with controllable channel lengths still faces challenges. Here, a simple and reliable laser patterning method for preparing patterned lateral/vertical 1T/2H VS 2 /MoS 2 metal/semiconducting heterostructures is reported. Specifically, site‐selective etching of VS 2 can be realized through the combination of laser radiation and acid solution etching. Further, pre‐patterned VS 2 nanoplates with edge dangling bonds can offer effective nucleation points for the lateral epitaxial growth of MoS 2 , thus generating patterned VS 2 ‐MoS 2 lateral heterostructures. The laser processing method can further be used to create patterned VS 2 /MoS 2 vertical van der Waals (vdWHs), which can only selectively etch the upper layer VS 2 while maintaining the intrinsic structure of the bottom layer MoS 2 . The obtained patterned VS 2 /MoS 2 vdWHs show a similar channel length of ≈420 nm, and the VS 2 vdW contact MoS 2 transistor is fabricated, delivering an On‐state current of 4.01 µA/µm, and carrier mobility of 3.56 cm 2 s −1 V −1 . This approach is also general for preparing patterned VSe 2 , VSe 2 /WSe 2 heterostructures.