Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications
B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, V. Bharath Sreenivasulu, N. Aruna Kumari
Topics & Concepts
Materials scienceHigh-electron-mobility transistorTransconductanceOptoelectronicsBarrier layerDopingElectrical engineeringTransistorNanotechnologyLayer (electronics)VoltageEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor Quantum Structures and Devices