Nonvolatile and volatile resistive switching characteristics in MoS2 thin film for RRAM application
Xiaoyi Lei, Xiaoya Zhu, Hao Wang, Yang Dai, Han Zhang, Chunxue Zhai, Shulong Wang, Junfeng Yan, Wu Zhao
Topics & Concepts
Non-volatile memoryResistive random-access memoryMaterials scienceOptoelectronicsTrappingThin filmResistive touchscreenSchottky barrierNanotechnologyNeuromorphic engineeringVoltageElectrical engineeringComputer scienceDiodeBiologyEcologyArtificial neural networkMachine learningEngineeringAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesTransition Metal Oxide Nanomaterials