Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate
Lantian Zhao, Qiang Liu, Chenhe Liu, Lingli Chen, Yumeng Yang, Xing Wei, Zhiqiang Mu, Wenjie Yu
Abstract
The total ionizing dose response of nanosheet gate-all-around metal-oxide-semiconductor field effect transistor (NS GAA MOSFET) fabricated on novel void-embedded silicon on insulator (VESOI) substrate was investigated in this work. Strong radiation tolerance with as small as 46.6mV threshold voltage shift and non-discernable increase of off-state current were observed even at a dose of 7Mrad(Si) X-ray irradiation. Both the experiment and simulation results reveal that the radiation tolerance of the MOSFET device can be inherently attributed to the GAA channel. Our work undoubtedly demonstrates that the NS GAA device on VESOI substrate has great potential for radiation-harden applications under heavy radiation environment.