High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures
Yosuke Sasama, Taisuke Kageura, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, T. Yamaguchi
Topics & Concepts
Materials scienceHexagonal boron nitrideDiamondHeterojunctionOptoelectronicsBand gapHexagonal crystal systemNitrideTransistorChannel (broadcasting)NanotechnologyChemistryGrapheneCrystallographyComposite materialLayer (electronics)Electrical engineeringTelecommunicationsComputer scienceEngineeringVoltageDiamond and Carbon-based Materials ResearchSemiconductor materials and devicesBoron and Carbon Nanomaterials Research