Novel lead–tin telluride (PbSnTe) thermoelectric material manufactured via horizontal vapour phase growth technique (HVPG)
Sopheap Sam, Laurence A. Gan Lim, Sundararajan Thirumalai, Ardi Wiranata, Jamasri Jamasri, Jayan Sentanuhady, Gil Nonato C. Santos, Muhammad Akhsin Muflikhun
Abstract
Pb 0.33 Sn 0.67 Te is an important semiconductor thermoelectric material . It was successfully synthesized through a HVPG technique. The growth temperature and time are varied in the range of 1000 °C–1200 °C and 4–8 h, respectively. A 2 k factorial design of experiments is used to study the effect of material thermoelectric performance (ZT). Investigations revealed that maximum ZT of 0.084 can be achieved at 1200 °C growth temperature of and 4 h anneal time of. The crystals showed high ZT value, which is likely to have contributed to the ZT enhancement. It showed that Pb 0.33 Sn 0.67 Te manufactured via HVPG applied for thermoelectric applications.