Selective etching of SiN against SiO2 and poly-Si films in hydrofluoroethane chemistry with a mixture of CH2FCHF2, O2, and Ar
Shih‐Nan Hsiao, Kenji Ishikawa, Toshio Hayashi, Jiwei Ni, Takayoshi Tsutsumi, Makoto Sekine, Masaru Hori
Topics & Concepts
SelectivityEtching (microfabrication)Silicon nitrideSiliconChemistryQuadrupole mass analyzerAnalytical Chemistry (journal)IonFabricationReactive-ion etchingNitrideElectron paramagnetic resonanceSilicon dioxideRadicalInorganic chemistryMaterials scienceOrganic chemistryMetallurgyPhysicsLayer (electronics)PathologyMedicineCatalysisAlternative medicineNuclear magnetic resonanceSemiconductor materials and devicesPlasma Diagnostics and ApplicationsDiamond and Carbon-based Materials Research