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Enhanced performance UV photodetectors based on the β-Ga2o3/GaN photodiode of the reversed substitution growth with introduction nucleation layer of GaON by oxygen plasma treatment

Jiale Zhang, Yurui Han, Yuefei Wang, Shihao Fu, Yiping Miao, Rongpeng Fu, Weizhe Cui, Zhe Wu, Bingsheng Li, Aidong Shen, Yichun Liu

2025Materials Today Physics9 citationsDOI

Topics & Concepts

Materials scienceNucleationLayer (electronics)PhotodiodePhotodetectorOptoelectronicsSubstitution (logic)PlasmaOxygenChemical engineeringPhotochemistryNanotechnologyChemistryOrganic chemistryEngineeringComputer scienceProgramming languagePhysicsQuantum mechanicsGa2O3 and related materialsAdvanced Photocatalysis TechniquesZnO doping and properties
Enhanced performance UV photodetectors based on the β-Ga2o3/GaN photodiode of the reversed substitution growth with introduction nucleation layer of GaON by oxygen plasma treatment | Litcius