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Stoichiometric Control and Optical Properties of BaTiO<sub>3</sub> Thin Films Grown by Hybrid MBE

Benazir Fazlioglu‐Yalcin, Albert C. Suceava, Tatiana Kuznetsova, Ke Wang, Venkatraman Gopalan, Roman Engel‐Herbert

2023Advanced Materials Interfaces22 citationsDOIOpen Access PDF

Abstract

Abstract BaTiO 3 is a technologically relevant material in the perovskite oxide class with above‐room‐temperature ferroelectricity and a very large electro‐optical coefficient, making it highly suitable for emerging electronic and photonic devices. An easy, robust, straightforward, and scalable growth method is required to synthesize epitaxial BaTiO 3 thin films with sufficient control over the film's stoichiometry to achieve reproducible thin film properties. Here the growth of BaTiO 3 thin films by hybrid molecular beam epitaxy is reported. A self‐regulated growth window is identified using complementary information obtained from reflection high energy electron diffraction, the intrinsic film lattice parameter, film surface morphology, and scanning transmission electron microscopy. Subsequent optical characterization of the BaTiO 3 films by spectroscopic ellipsometry revealed refractive index and extinction coefficient values closely resembling those of stoichiometric bulk BaTiO 3 crystals for films grown inside the growth window. Even in the absence of a lattice parameter change of BaTiO 3 thin films, degradation of optical properties is observed, accompanied by the appearance of a wide optical absorption peak in the IR spectrum, attributed to optical transitions involving defect states present. Therefore, the optical properties of BaTiO 3 can be utilized as a much finer and more straightforward probe to determine the stoichiometry level present in BaTiO 3 films.

Topics & Concepts

Materials scienceStoichiometryThin filmOptoelectronicsChemical engineeringNanotechnologyPhysical chemistryChemistryEngineeringFerroelectric and Piezoelectric MaterialsElectronic and Structural Properties of OxidesMultiferroics and related materials
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