First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors

S. Vaziri, I. Datye, Elia Ambrosi, Asir Intisar Khan, Hyun-Keun Kwon, C. H. Wu, Chia‐Wei Hsu, Jeremy Guy, T. Y. Lee, H.‐S. Philip Wong, X. Y. Bao

20222022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)10 citationsDOI

Abstract

Operating voltage compatibility and low power consumption are crucial for on-chip integration of high-density one-selector-one-resistor (1S/1R) arrays. However, traditional chalcogenide-based threshold selectors require a one-time first fire operation with voltage higher than the threshold voltage. Here, we introduce a novel SiOTe selector based on a stable silicon oxide matrix, with tunable first fire voltage and ultimately first fire-free characteristics. These selectors achieve low threshold voltages (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> = 1.1 V – 1.5 V) and low off-current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> ~ 3 nA at 0.5 V for V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> = 1.2 V). SiOTe selectors show promising thermal stability (300 °C, 30 min in air) and endurance of >10 8 cycles.

Topics & Concepts

ResistorVoltageElectrical engineeringAnalytical Chemistry (journal)PhysicsMaterials scienceOptoelectronicsChemistryEngineeringChromatographyAdvanced Memory and Neural ComputingSemiconductor materials and devicesPhase-change materials and chalcogenides

First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiO<sub>x</sub>Te<sub>y</sub> Selectors

Abstract

Topics & Concepts