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High-Pressure Near-Infrared Luminescence Studies of Fe<sup>3+</sup>-Activated LiGaO<sub>2</sub>

Ajeesh Kumar Somakumar, Lev-Ivan Bulyk, Volodymyr Tsiumra, Justyna Barzowska, Puxian Xiong, Anastasiia Lysak, Yaroslav Zhydachevskyy, A. Suchocki

2023Inorganic Chemistry57 citationsDOIOpen Access PDF

Abstract

High Resolution Image Download MS PowerPoint Slide A 0.25% iron (Fe 3+ )-doped LiGaO 2 phosphor was synthesized by a high-temperature solid-state reaction method. The phosphor was characterized utilizing X-ray diffraction (XRD), scanning electron microscopy (SEM), high-pressure photoluminescence, and photoluminescence decay measurement techniques using diamond anvil cells (DACs). The powder X-ray analysis shows that the phosphor is a β polymorph of LiGaO 2 with an orthorhombic crystallographic structure at room temperature. The SEM result also confirms the presence of well-dispersed micro-rod-like structures throughout the sample. The photoluminescence studies in the near-infrared (NIR) range were performed at ambient, low-temperature, and high-pressure conditions. The synthesized phosphor exhibits a photoluminescence band around 746 nm related to the 4 T 1 → 6 A 1 transition with a 28% quantum efficiency at ambient conditions, which shifts toward longer wavelengths with the increase of pressure. The excitation spectra of Fe 3+ are very well fitted with the Tanabe–Sugano crystal-field theory. The phosphor luminescence decays with a millisecond lifetime. The high-pressure application transforms the β polymorph of LiGaO 2 into a trigonal α structure at the pressure of about 3 GPa. Further increase of pressure quenches the Fe 3+ luminescence due to the amorphization process of the material. The prepared phosphor exhibits also mechanoluminescence properties in the NIR spectral region.

Topics & Concepts

ChemistryLuminescenceInfraredHigh pressurePhysical chemistryAnalytical Chemistry (journal)RadiochemistryOpticsThermodynamicsOrganic chemistryPhysicsLuminescence Properties of Advanced MaterialsGa2O3 and related materialsSemiconductor materials and devices
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