Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode
Liuan Li, Xiaobo Li, Taofei Pu, Shaoheng Cheng, Hongdong Li, Jin‐Ping Ao
Abstract
Vertical GaN Schottky barrier diode was fabricated as temperature sensor by using a thermally stable TiN anode. The current-voltage characteristics of the diode measured at various temperature present a zero-temperature coefficient (ZTC) bias point of approximately 0.6 V. At the voltage below the ZTC bias point (sub-threshold region), the forward voltage at a fixed current decreases linearly with the increasing temperature, resulting in a sensitivity of approximately 1.3 mV/K. In the reversely biased region, the leakage current also presents temperature-dependent behavior with a sensitivity of approximately 19.7 mA/K regardless of the bias. Those results can be interpreted by the thermionic emission model.