First-principles theory of extending the spin qubit coherence time in hexagonal boron nitride
J. J. Lee, Huijin Park, Hosung Seo
Abstract
Abstract Negatively charged boron vacancies (V B − ) in hexagonal boron nitride (h-BN) are a rapidly developing qubit platform in two-dimensional materials for solid-state quantum applications. However, their spin coherence time (T 2 ) is very short, limited to a few microseconds owing to the inherently dense nuclear spin bath of the h-BN host. As the coherence time is one of the most fundamental properties of spin qubits, the short T 2 time of V B − could significantly limit its potential as a promising spin qubit candidate. In this study, we theoretically proposed two materials engineering methods, which can substantially extend the T 2 time of the V B − spin by four times more than its intrinsic T 2 . We performed quantum many-body computations by combining density functional theory and cluster correlation expansion and showed that replacing all the boron atoms in h-BN with the 10 B isotope leads to the coherence enhancement of the V B − spin by a factor of three. In addition, the T 2 time of the V B − can be enhanced by a factor of 1.3 by inducing a curvature around V B − . Herein, we elucidate that the curvature-induced inhomogeneous strain creates spatially varying quadrupole nuclear interactions, which effectively suppress the nuclear spin flip-flop dynamics in the bath. Importantly, we find that the combination of isotopic enrichment and strain engineering can maximize the T 2 time of V B − , yielding 207.2 μs and 161.9 μs for single- and multi-layer h- 10 BN, respectively. Furthermore, our results can be applied to any spin qubit in h-BN, strengthening their potential as material platforms to realize high-precision quantum sensors, quantum spin registers, and atomically thin quantum magnets.