Litcius/Paper detail

Dual-Mode Three-Way Doherty Power Amplifier With Extended High-Efficiency Range Against Load Mismatch

Jingzhou Pang, Yujie Han, Jun Peng, Mingyu Li, Zhijiang Dai, Weimin Shi, Xin Yu Zhou, Anding Zhu

2023IEEE Transactions on Microwave Theory and Techniques22 citationsDOI

Abstract

This article presents theoretical analysis and design methodology of a dual-mode three-way Doherty power amplifier (DPA) with an extended high-efficiency range and robust load mismatch adaptability. A nonlinear current model for active devices is established and employed to analyze the impact of load mismatches in the three-way DPA and a novel output combiner is proposed to minimize the mismatch impact by reconfiguring the gate bias conditions and setting distinct loads at the control port of the combiner. To validate the proposed DPA architecture and design approach, a prototype using commercial Gallium Nitride (GaN) transistors operated at the center frequency of 2.0 GHz was designed and fabricated. Under the ideal condition with a matched 50 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega$</tex-math> </inline-formula> load, the fabricated DPA attains higher than 60% efficiency at 9 dB back-off. Through mode re-configuration, the proposed DPA presents 47.8%–56.7% back-off efficiency with less than 1.5 dB power fluctuation at 2:1 voltage standing wave ratio (VSWR) over 360 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^\circ$</tex-math> </inline-formula> phase span. When driven by a 80 MHz signal with 8 dB peak to average power ratio (PAPR), the DPA achieves 45.7%–52.2% average efficiency and better than <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula> 45 dBc adjacent channel power ratio (ACPR) with digital pre-distortion (DPD) under the load mismatch conditions.

Topics & Concepts

AmplifierGallium nitridePower (physics)LinearityElectrical engineeringTopology (electrical circuits)Electronic engineeringComputer scienceMaterials scienceMathematicsEngineeringPhysicsCMOSComposite materialLayer (electronics)Quantum mechanicsAdvanced Power Amplifier DesignRadio Frequency Integrated Circuit DesignGaN-based semiconductor devices and materials
Dual-Mode Three-Way Doherty Power Amplifier With Extended High-Efficiency Range Against Load Mismatch | Litcius