Carrier Trapping in Wrinkled 2D Monolayer MoS<sub>2</sub> for Ultrathin Memory
Rongjie Zhang, Yongjue Lai, Wenjun Chen, Changjiu Teng, Yujie Sun, Liusi Yang, Jingyun Wang, Bilu Liu, Hui–Ming Cheng
Abstract
Atomically thin two-dimensional (2D) semiconductors are promising for next-generation memory to meet the scaling down of semiconductor industry. However, the controllability of carrier trapping status, which is the key figure of merit for memory devices, still halts the application of 2D semiconductor-based memory. Here, we introduce a scheme for 2D material based memory using wrinkles in monolayer 2D semiconductors as controllable carrier trapping centers. Memory devices based on wrinkled monolayer MoS2 show multilevel storage capability, an on/off ratio of 106, and a retention time of >104 s, as well as tunable linear and exponential behaviors at the stimulation of different gate voltages. We also reveal an interesting wrinkle-based carrier trapping mechanism by using conductive atomic force microscopy. This work offers a configuration to control carriers in ultrathin memory devices and for in-memory calculations.