The current modulation of anomalous Hall effect in van der Waals Fe3GeTe2/WTe2 heterostructures
Yan Shao, Wenxing Lv, Junjie Guo, Bao-tao Qi, Weiming Lv, Shangkun Li, Guanghua Guo, Zhongming Zeng
Abstract
The recent discovery of magnetic two-dimensional (2D) crystals offers a platform to study the spin-related phenomena in van der Waals (vdW) heterostructures. Here, we investigate the anomalous Hall effect in the bilayer all-vdW heterostructure of Fe3GeTe2 (FGT)/WTe2. In such devices, the coercivity of thin-FGT flakes can be effectively modulated by the current, which is mainly attributed to the Joule heating effect generated at the interface of the FGT/WTe2 bilayer because of the low interfacial thermal conductance. The gradient ΔHc/ΔJFGT is as large as 0.55 kOe MA−1 cm2 at 10 K. Our work provides great guidance for the design of next generation spintronic devices based on atomically thin van der Waals heterostructures.