High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer
Jeong-Gil Kim, Chu‐Young Cho, Eunjin Kim, Jae Seok Hwang, Kyungho Park, Jung‐Hee Lee
Abstract
We have successfully grown AlGaN/GaN high electron mobility transistor (HEMT) structure on the high-quality undoped thick AlN buffer layer with large band offset to replace the conventional high-resistivity GaN buffer layer. The AlGaN/GaN HEMT fabricated on this AlN buffer layer exhibits low OFF-state leakage current with high I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\scriptscriptstyle ON</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\scriptscriptstyle OFF</sub> of ~ 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> due to enhanced confinement of the electrons in the 2-D electron gas (2-DEG) channel. The undoped AlN buffer layer is responsible for suppressing the trapping effects to greatly reduce the current dispersion in pulsed I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\text D</sub> - V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\text D</sub> characteristics, which is hardly avoided in conventional deep acceptor-doped GaN buffer layer. The device also demonstrates high breakdown voltage of 2154 V with very high figure of merit (FOM) of ~1.8 GV $^{2-1}$ cm $^{-{2}}$ , one of the highest ever reported, suggesting that the AlGaN/GaN-based Hemts WITH AlN buffer layer are promising for high-performance RF and power applications.