Investigation of the time dependent gate dielectric stability in SiC MOSFETs with planar and trench gate structures
Wei‐Cheng Lin, Wei-Chen Yu, Bang-Ren Chen, Yu‐Sheng Hsiao, Zhen-Hong Huang, Chia-Lung Hung, Yi‐Kai Hsiao, Nai-Jen Yeh, Hao‐Chung Kuo, Chang‐Ching Tu, Tian‐Li Wu
Topics & Concepts
Time-dependent gate oxide breakdownMaterials scienceGate oxideGate dielectricOptoelectronicsTrenchMOSFETDielectric strengthSilicon carbidePlanarMetal gateNegative-bias temperature instabilityDielectricElectrical engineeringVoltageNanotechnologyEngineeringComposite materialTransistorComputer scienceComputer graphics (images)Layer (electronics)Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesCopper Interconnects and Reliability