Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb<sub>2</sub>Br<sub>5</sub> perovskite
Tufan Paul, Pranab Kumar Sarkar, Soumen Maiti, Aditi Sahoo, Kalyan Kumar Chattopadhyay
Abstract
) characteristics of the as-fabricated all-inorganic halide-perovskite-based memory device were further explored under different bending conditions to determine its electrical reliability and mechanical stability. This flexible device exhibited no discernible difference in device performance under flat or bent conditions, and the performance remained nearly the same even after 500 bending cycles. In addition to control of the RS effect of the device using an electrical field, the performance of the device under light was also explored. Blue light modulates the resistive states by regulating the condition of photo-generated electron-hole pairs, and the SET and RESET voltages are changed from 2.34 to 2.14 V and from -2.04 to -1.90 V, respectively. The observed RS behavior is explained on the basis of the creation and partial annihilation of conductive multifilaments, which is dominated by the migration of bromine ions and their associated vacancies in the HP layer. We believe that this work will offer a new context to understand the intrinsic characteristics of HPs for RS applications at low voltage and validate their potential in the design of next-generation stable and nonvolatile memory devices for future flexible electronic systems.