Effect of absorber layer bandgap of CIGS-based solar cell with (CdS/ZnS) buffer layer
Hassan Ismail Abdalmageed, Mostafa Fedawy, Moustafa H. Aly
Abstract
Abstract This article uses computational models to evaluate the potential of copper-indium-gallium-diselenide (CIGS) thin film solar cells. The use of cadmium sulphide (CdS) renders the solar cell environmentally hazardous. A zinc sulphide (ZnS) that is non-toxic and has a large bandgap is studied as a potential replacement for cadmium sulphide in CIGS-based solar cells. The present research focuses on the impact of the CIGS-based solar cell bandgap absorber layer by increasing the absorber layer thickness (0.1-2 μm) using the solar cell simulator simulation tool SCAPS. The basic simulation produces 18.2 % efficiency with a CdS buffer layer, which is 9.95% better than the previously published work. The Simulated efficiency is 22.16% for the CIGS solar cell using ZnS. The simulation of solar cell characteristics of how the thickness of the absorber layer, the gallium grading (efficiency ranges up to 22.25 %) is demonstrated, showing the effect of buffer layer (ZnS) on the current of short-circuit density (JSC), open-circuit voltage (Voc), fill factor (FF), and efficiency (η) of the solar cell.