Low-Temperature Direct Synthesis of Multilayered h-BN without Catalysts by Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition
Masaya Yamamoto, Hiromasa Murata, Noriyuki Miyata, Hiroshi Takashima, Masayoshi Nagao, Hidenori Mimura, Yoichiro Neo, K. Murakami
Abstract
High Resolution Image Download MS PowerPoint Slide Low-temperature direct synthesis of thick multilayered hexagonal-boron nitride (h-BN) on semiconducting and insulating substrates is required to produce high-performance electronic devices based on two-dimensional (2D) materials. In this study, multilayered h-BN with a thickness exceeding 5 nm was directly synthesized on quartz and Si at low temperatures, between 400 and 500 °C, by inductively coupled plasma-enhanced chemical vapor deposition using borazine as the precursor material. The quality and thickness of the h-BN crystals were investigated with respect to synthesis parameters, namely, temperature, radio frequency power, N 2 flow rate, and H 2 flow rate. Introducing N 2 and H 2 carrier gases critically affected the deposition rate, and increasing the carrier gas flow rate enhanced the h-BN crystal quality. The typical optical band gap of synthesized h-BN was approximately 5.8 eV, consistent with that of previous studies. The full width at half-maximum of the h-BN Raman peak was 32–33 cm –1, comparable to that of commercially available multilayered h-BN on Cu foil. These results are expected to facilitate the development of 2D materials for electronics applications.