Large-area β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode and its application in DC–DC converters
Wei Guo, Zhao Han, Xiaolong Zhao, Guangwei Xu, Shibing Long
Abstract
Abstract We demonstrate superb large-area vertical β -Ga 2 O 3 SBDs with a Schottky contact area of 1 × 1 mm 2 and obtain a high-efficiency DC–DC converter based on the device. The β -Ga 2 O 3 SBD can obtain a forward current of 8 A with a forward voltage of 5 V, and has a reverse breakdown voltage of 612 V. The forward turn-on voltage ( V F ) and the on-resistance ( R on ) are 1.17 V and 0.46 Ω, respectively. The conversion efficiency of the β -Ga 2 O 3 SBD-based DC–DC converter is 95.81%. This work indicates the great potential of Ga 2 O 3 SBDs and relevant circuits in power electronic applications.
Topics & Concepts
Schottky barrierSchottky diodeMaterials scienceConvertersDiodeOptoelectronicsVoltageElectrical engineeringEnergy conversion efficiencyPower (physics)PhysicsEngineeringQuantum mechanicsGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques