Temperature dependence of the Auger recombination coefficient in InGaN/GaN multiple-quantum-well light-emitting diodes
Han‐Youl Ryu, Geunhwan Ryu, Chibuzo Onwukaeme, Byongjin Ma
Abstract
This study investigated the temperature dependence of the Auger recombination coefficient (C) in an InGaN/GaN blue multiple-quantum-well (MQW) light-emitting diode structure at temperatures between 20 and 100°C. The temperature dependence of C was determined by fitting the measured external quantum efficiency (EQE) data using an analytical model or numerical simulation. In the analytical model, the carrier density in InGaN MQWs was assumed to be constant and independent of temperature. In contrast, the inhomogeneous carrier distribution in MQWs and its temperature-dependent redistribution were included in the numerical simulation. When the analytical model was employed to fit the EQE curve, C decreased with increasing temperature. On the other hand, when the numerical simulation was employed, C increased steadily by ∼31% as the temperature was increased from 20 to 100°C. We found that the temperature-dependent carrier distribution is important to consider when determining the temperature dependence of the Auger recombination coefficient in InGaN MQW structures.