Effect of Annealing Temperature and Time on Ni‐Catalyzed In Situ Growth of Graphene on Diamond Substrate
Sanchuan Wang, Qingshun Bai, Shandeng Chen
Abstract
Abstract Graphene has a series of excellent physical and chemical properties. In recent years, the in situ growth of graphene on diamond substrate has been the research focus. In this paper, graphene (or graphite nanoplate) is grown on a diamond substrate by vacuum high‐temperature rapid annealing method with the catalysis of Ni. Annealing temperature and time are varied and graphene with different layer numbers, lattice defect densities, and topographies are produced on a diamond. Different kinds of characterization such as Raman spectroscopy, optical density meter, scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and atomic force microscopy (AFM) are used to characterize and analyze these properties, further determine the critical temperature and critical time of diamond‐graphene transformation, and study the influence of temperature and time on the layer number and quality of graphene. After annealing at 850 °C for 30 min, the sample can grow ≈56 layers of high‐quality graphene, which has quite low roughness and few defects.