Synergistic optimization of thermoelectric performance of Sb doped GeTe with a strained domain and domain boundaries
Khasim Saheb Bayikadi, Chien‐Ting Wu, Li–Chyong Chen, Kuei-Hsien Chen, F. C. Chou, R. Sankar
Abstract
An optimized two-step melt-quenching synthesis method is proposed for GeTe to show a highly reproducible high <italic>ZT</italic> ∼ 2.35 at 800 K (in Ge<sub>0.9</sub>Sb<sub>0.1</sub>Te) through simultaneous carrier concentration and microstructural control.
Topics & Concepts
Thermoelectric effectMaterials scienceDopingQuenching (fluorescence)Domain (mathematical analysis)Condensed matter physicsOptoelectronicsThermodynamicsPhysicsOpticsFluorescenceMathematicsMathematical analysisAdvanced Thermoelectric Materials and DevicesChalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenides