Digitally aligned ZnO nanowire array based synaptic transistors with intrinsically controlled plasticity for short-term computation and long-term memory
Shuo Zhang, Lu Yang, Chengpeng Jiang, Lin Sun, Kexin Guo, Hong Han, Wentao Xu
Abstract
short-term plasticity (STP) and long-term plasticity (LTP), was achieved using the same source material and post-fabrication condition for the first time, which is essential for simple and low-cost fabrication. Moreover, these versatile properties of ZnO STs enable the integration of STP and LTP as realized by multiplexed neurotransmission of different neurotransmitters: dopamine and acetylcholine, which promote learning and memory in organisms, so the device may utilize these processes in neuroelectronic devices. Devices with well-controlled synaptic plasticity can simulate the "learning-forgetting-erase" and "instant display" processes. ZnO NWs may enable the development of neuromorphic computers that can use the same material to achieve both short-term computation and long-term memory.