On the Reliability of High-Performance Dual Gate (DG) W-Doped In<sub>2</sub>O<sub>3</sub> FET
Khandker Akif Aabrar, Hyeonwoo Park, Sharadindu Gopal Kirtania, Eknath Sarkar, Md Abdullah Al Mamun, Sunbin Deng, Chengyang Zhang, G. B. Rayner, Kyeongjae Cho, Suman Datta
Abstract
We demonstrate a high performance back-end-of-line (BEOL) compatible tungsten (W)-doped In<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> channel (IWO) dual gate (DG) field-effect transistor (FET) with ultra low-leakage current <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$<10^{-15}\ \ \mathrm{A}/\mu \mathrm{m}$</tex> and high <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}$</tex> ratio of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$5.8\times 10^{11}$</tex> at 2.5V overdrive <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{V}_{\text{ov}})$</tex>. In addition, the IWO DG FET demonstrates a record low negative bias temperature instability (NBTI) of 7.2mV, record low hot carrier degradation (HCD) of 63mV and a low positive bias temperature instability (PBTI) of 85mV at 1V <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{ov}}$</tex> which makes IWO DG FET a potential candidate for realizing high density embedded-DRAM for last-level cache (LLC). Furthermore, we develop a comprehensive modeling framework for assesing the reliability of amorphous oxide semiconductor (AOS) channel FETs which can provide insights into the threshold voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{V}_{\mathrm{T}})$</tex> instability mechanisms and help design appropriate mitigation strategies.