Photoluminescence and scintillation properties of Eu-doped Ga <sub>2</sub> O <sub>3</sub> single crystals grown by the floating zone method
Takayuki Yanagida, Takumi Kato, Daisuke Nakauchi, Noriaki Kawaguchi
Abstract
Abstract We developed undoped, Eu 1%-, 3%-, and 10%-doped Ga 2 O 3 samples by the floating zone method to evaluate their photoluminescence and scintillation properties. The photoluminescence of the undoped, Eu 1%-, and 3%-doped samples showed intense host emission in the UV–vis range, while the Eu 10%-doped sample exhibited strong emission at 700–800 nm. In the scintillation spectra obtained upon X-ray excitation, host emission was observed in all the samples, and the Eu-doped ones exhibited some sharp emission lines due to the 4f–4f transitions of Eu 3+ . Among the samples investigated, the Eu 1%-doped sample showed the highest emission intensity for both scintillation and thermally stimulated luminescence.