Unravelling the Origin of Ultra‐Low Conductivity in SrTiO<sub>3</sub> Thin Films: Sr Vacancies and Ti on A‐Sites Cause Fermi Level Pinning
Maximilian Morgenbesser, Alexander Viernstein, Alexander Schmid, Christopher Herzig, Markus Kubicek, Stefanie Taibl, Gesara Bimashofer, Jochen Stahn, C. A. F. Vaz, M. Döbeli, Federico Biautti, Juan de Dios Sirvent, Maciej Oskar Liedke, Maik Butterling, Michał Kamiński, Martin Tolkiehn, Vedran Vonk, Andreas Stierle, A. Wagner, Albert Tarancón, Andreas Limbeck, Jürgen Fleig
Abstract
Abstract Different SrTiO 3 thin films are investigated to unravel the nature of ultra‐low conductivities recently found in SrTiO 3 films prepared by pulsed laser deposition. Impedance spectroscopy reveals electronically pseudo‐intrinsic conductivities for a broad range of different dopants (Fe, Al, Ni) and partly high dopant concentrations up to several percent. Using inductively‐coupled plasma optical emission spectroscopy and reciprocal space mapping, a severe Sr deficiency is found and positron annihilation lifetime spectroscopy revealed Sr vacancies as predominant point defects. From synchrotron‐based X‐ray standing wave and X‐ray absorption spectroscopy measurements, a change in site occupation is deduced for Fe‐doped SrTiO 3 films, accompanied by a change in the dopant type. Based on these experiments, a model is deduced, which explains the almost ubiquitous pseudo‐intrinsic conductivity of these films. Sr deficiency is suggested as key driver by introducing Sr vacancies and causing site changes (Fe Sr and Ti Sr ) to accommodate nonstoichiometry. Sr vacancies act as mid‐gap acceptor states, pinning the Fermi level, provided that additional donor states (most probably ) are present. Defect chemical modeling revealed that such a Fermi level pinning also causes a self‐limitation of the Ti site change and leads to a very robust pseudo‐intrinsic situation, irrespective of Sr/Ti ratios and doping.