VETAM-M: A General Model for Voltage-Controlled Memcapacitive-Coupled Memristors
Kuan Ren, Kejia Zhang, Xizi Qin, Feng Yang, Bai Sun, Yong Zhao, Yong Zhang
Abstract
Memristors and memcapacitors with threshold voltages have a great potential for chaotic circuit design, memory, and neuromorphic systems. Numerous physical experiments have shown the existence of resistance and capacitance coupling changes phenomenon in some voltage-controlled memristors. In this brief, a voltage threshold adaptive memcapacitive-coupled memristor (VTEAM-M) model is proposed to describe the behavior of resistance-capacitance coupling changes and multiple memristive states of voltage-controlled memristors. The core idea of the model is to divide the device into multiple states, each state corresponds to an equivalent dielectric constant function and an equivalent resistivity function, and then use state variables to represent the superposition and transition between states. The VTEAM-M model retaining the accuracy of Voltage ThrEshold Adaptive Memristor (VTEAM) model in resistance simulation, additionally, adds the modeling of multiple memristive states and capacitance changes of devices. The simulation results are in good agreement with the variation of resistance and capacitance with voltage in real devices.